Complementary resistive switches (CRS) are considered as a potential solutionfor the sneak path problem in large-scale integration of passive crossbarresistive memory arrays. A typical CRS is composed of two bipolar memory cellsthat are connected anti-serially. Here we report a tantalum-oxide basedresistive memory that achieves the complementary switching functionality withina single memory cell. The complementary switching effect is accompanied byswitching polarity reversal in different voltage bias regimes. These effectswere explained by the redistribution of oxygen vacancies inside thetantalum-oxide layers. The effects of symmetry breaking on bipolar switchingand complementary switching were also discussed.
展开▼
